on-state current 8 amp fs0802.h sensitive gate scr these series of s ilicon c ontrolled r ectifier use a high performance pnpn technology. these parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. apr - 03 absolute maximum ratings, according to iec publication no. 134 on-state current average on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak reverse gate voltage peak gate current peak gate dissipation gate dissipation operating temperature storage temperature soldering temperature i t(rms) parameter conditions min. max. unit gate trigger current < 200 ? off-state voltage 200 v ?600 v symbol i t(av) i tsm i tsm i 2 t v grm i gm p gm p g(av) t j t stg t sld 180?conduction angle, t c = 110 ? half cycle, q = 180 ? t c = 110 ? half cycle, 60 hz half cycle, 50 hz t p = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20ms max. 10s max. -40 -40 a a a a a 2 s v a w w ? ? ? 8 5 73 70 24.5 8 4 5 1 +125 +150 260 repetitive peak off state voltage parameter conditions voltage unit symbol v drm v rrm r gk = 1 k w b 200 v d 400 m 600 to220-ab k a g a
fs0802.h sensitive gate scr apr - 03 part number information fagor scr current case voltage sensitivity f s 08 02 b h 00 forming tr packaging electrical characteristics gate trigger current off-state leakage current on-state voltage gate trigger voltage gate non trigger voltage holding current parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 140 w . t j = 25 ? 02 200 1 5 1.6 0.8 0.1 ma ? v v v max max max max max min 50 60 max / i rrm v tm v gt v gd i h di / dt r th(j-a) critical rate of current rise thermal resistance junction-amb for dc ?/w v d = v drm , t j = 125 ? t j = 25 ? v r = v rrm , at i t = 16 amp, tp = 380 ?, t j = 25 ? i t = 50 ma, tr 100 ns, f = 60 hz, t j = 125 ? v d = 12 v dc , r l = 140 w , t j = 25 ? v d = v drm , r l = 3.3k w , t j = 125 ? ma min a/? r d t j = 125 ? r d dynamic resistance max 46 m w 5 max i l ma 6 latching current i g = 1 ma, v/? dv / dt critical rate of voltage rise min 5 20 r th(j-c) thermal resistance junction-case for dc ?/w v t0 t j = 125 ? threshold voltage max 0.85 v i g = 2 x i gt r gk = 220 w r gk = 220 w r gk = 1k w t j = 25 ? r gk = 1 k w v d = 0.67 x v drm , r gk = 220 w , t j = 125 ? ?
apr - 03 fig. 1: maximum average power dissipation versus average on-state current. fs0802.h sensitive gate scr 0 2 10 8 6 4 2 0 4 6 p (w) i t(av) (a) 1 3 5 7 1.0 k = [zth(j-c) / rth (j-c)] fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 1e-3 1e-2 1e-1 1e+0 tp (s) 0.5 0.2 0.1 a 360 fig. 2: average and d.c. on-state current versus case temperature. i t(av) (a) t case (?) 10 8 6 4 2 0 0 25 50 75 100 125 a = 180 d.c. i gt , i h (tj) / i gt , i h (tj = 25 ?) fig. 4: relative variation of gate trigger current, holding and latching current versus junction temperature. tj (?) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 20 60 80 100 0 40 120 140 igt ih & il 1 10 100 1000 fig. 5: non repetitive surge peak on-state current versus number of cycles. 80 70 60 50 40 30 20 10 0 i tsm (a) number of cycles tj initial = 25 c f = 50 hz 300 1 10 i tsm (a). i 2 t (a 2 s) fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2 t. tp(ms) 2 5 100 10 i tsm 20 50 i 2 t tj initial = 25 ?
apr - 03 fs0802.h sensitive gate scr 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 fig. 7: on-state characteristics (maximum values). i tm (a) 4.0 100.0 v tm (v) 4.5 10.0 1.0 0.1 5.0 tj = tj max. tj = 25 c tj max vto = 0.85 v rt = 46 m w package mechanical data to-220ab a a1 a2 b b1 b2 c c1 c2 e f i i4 l i2 i3 m ref. dimensions milimeters min. nominal max. 15.20 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 3.75 16.40 2.60 15.90 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70
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